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0°ÇÀÇ Èı⺸±âPhoto Lithography(Æ÷Åä °øÁ¤) º¸°í¼¿¡ ´ëÇØ ±â¼úÇÑ ¸®Æ÷Æ® Âü°íÀÚ·áÀÔ´Ï´Ù.
1Àå Á¤ÀÇ
2Àå Photo °øÁ¤¼ø¼
3Àå Photo Resist
4Àå Exposure
5Àå Development
photo lithography
photo lithography´Â waferÀ§¿¡ photoresist¸¦ µµÆ÷ÇÑ ÈÄ exposure¿¡ ÀÇÇØ mask¸¦ ÀÌ¿ëÇÏ¿© ¿øÇÏ´Â Çü»óÀÇ
patternÀ» Çü¼ºÇÏ´Â °øÁ¤ ultraviolet light mask pattern mask photoresist wafer
photolithography ?
Á¤ ÀÇ wafer ¼¼Á¤ Ç¥¸éó¸® pr µµÆ÷ soft bake exposure development hard bake alignment °øÁ¤¼ø¼ photo °øÁ¤¼ø¼
photo °øÁ¤ÀÌ ÀÌ·ç¾îÁö´Â °÷Àº yellowroomÀ̶ó ÇÏ¸ç ¹æ Àüü°¡ ³ë¶õ»öÀÌ´Ù.ÀÌÀ¯´Â ³ë±¤ ÀÛ¾÷½Ã ´Ù¸¥ ºûÀÌ µé¾î¿Í ÆÐÅÏ ÈѼÕÀ» ÃÖ¼ÒÈ Çϱâ À§ÇØ
yellow room photo resist
¹ÝµµÃ¼ Á¦Á¶ ½Ã ¿þÀÌÆÛ Ç¥¸é À§¿¡ ¹Ì¼¼ÇÑ È¸·Î¸¦ ±×¸®±â À§ÇÑ Æ÷Åä °øÁ¤¿¡¼ »ç¿ëµÇ´Â °íºÐÀÚ ¾×ü.
¿þÀÌÆÛ À§¿¡ ±ÕÀÏÇÏ°Ô ÄÚÆÃµÈ prÀº ºû¿¡ ³ëÃâµÇ¸é ÈÇÐÀû ¼ºÁúÀÌ º¯ÇÏ°Ô µÇ´Âµ¥, ºû¿¡ ³ëÃâµÈ ºÎºÐÀÌ Á¦°ÅµÇ¸é positive, ³ëÃâµÇÁö ¾Ê´Â ºÎºÐÀÌ Á¦°ÅµÇ¸é negative ÇüÀ¸·Î ºÐ·ùµÈ´Ù.
photo resist ?
photo resist
photo resist ±¸¼º?
polymer(°íºÐÀÚ)
-°íºÐÀÚ´Â ºÐÀÚ·®ÀÌ 1¸¸ ÀÌ»óÀÎ Å« ºÐÀÚ.
100°³ ÀÌ»óÀÇ ¿øÀÚ·Î ±¸¼º.
solvent(¿ëÁ¦)
-¿ëÁúÀ» ³ì¿© ¿ë¾×À» ¸¸µå´Â ¾×ü.
sensitizer(°¨±¤¹°Áú)
-Áõ°¨½ºÅ©¸°¿¡ µµÆ÷Çϰųª ¹ÚÆÇÀ¸·Î »ç¿ëÇÏ´Â ¹°Áú.
photo resist positive pr/ negative pr Ư¡ positive pr negative pr step coverage ³ª»Ý ÁÁÀ½ coating µÎ²² ³·À½ ³ôÀ½ photo resist prµµÆ÷ photo resist
pr°ú ½Ç¸®ÄÜ ¿þÀÌÆÛ¿ÍÀÇ Á¢Âø·Â Áõ´ë ¹× pr¿¡ ³ì¾ÆÀÖ´Â ¼Öº¥Æ®
¼ººÐÀ» Á¦°ÅÇϱâ À§ÇØ ¼öÇà
°ø±â³ª Áú¼Ò·Î ä¿öÁø 80~90µµ¾¾ÀÇ ¿Àºì¿¡¼ 10~30ºÐ°£ ¼öÇà
Çö»ó ÈÄ ÇÊ¿ä ¾ø´Â positive pr´Â ¿¿¡ Ãë¾àÇϱ⠶§¹®¿¡ soft
bake¸¦ ¼öÇàÇÏ°í ³ª¸é Á¦°Å°¡ ÈξÀ ¿ëÀÌ softbake photo resist
exposure ?
alignmentÀÌ ³¡³ ÈÄ maskÀÇ patternÀÌ wafer¿¡ Çü¼ºµÇµµ·Ï uv light¿¡ pr¸¦ ³ëÃâ½ÃÅ°´Â °øÁ¤ exposure alignment wafer¿¡ Çü¼ºµÈ ȸ·Î¿¡ »õ·Î Çü¼ºÇÒ maskÀÇ È¸·Î¸¦ Á¤·ÄÇÏ´Â ÀÛ¾÷ ±âÁ¸¿¡ Çü¼ºµÈ layer¿Í ÇöÀç °øÁ¤ layer°£ ÀÏÄ¡ wafer¿Í maskÀÇ À§Ä¡Á¤º¸°¡ ÇÊ¿ä ±âÁ¸Çü¼º-¿þÀÌÆÛ Çö°øÁ¤-¸¶½ºÅ© exposure align mask exposure Á¢ÃËÀμâ¹ý prÀÌ µµÆ÷µÈ waferÀ§¿¡ ¹°¸®ÀûÀ¸·Î mask¸¦ Á¢Ã˽ÃÄÑ Á¤ÇØÁø ½Ã°£ µ¿¾È uv¸¦ ³ë±¤ pr°ú mask»çÀÌÀÇ Á¢ÃËÀ¸·Î Çػ󵵰¡ ÁÁÀ½ pr°ú mask°¡ Á¢ÃËÇÏ°Ô µÇ¾î prÀÇ ¸·°ú, ¸ÕÁö³ª ½Ç¸®ÄÜÀÇ ¾ó·è¿¡ ÀÇÇØ ¼Õ»óÀ» ÀÔÀ» ¼ö ÀÖ´Ù exposure ±ÙÁ¢Àμâ¹ý maskÀÇ ¼Õ»óÀ» ÁÙÀ̱â À§ÇØ wafer»çÀÌ¿¡ gapÀ» µÒ mask¿Í wafer »çÀÌÀÇ °£°ÝÀÌ ÀÖ¾î maskÀÇ ¼Õ»ó°ú ¿À¿°ÀÇ ¹®Á¦°¡ ¾øÀ½ mask¿Í wafer »çÀÌÀÇ gapÀ¸·Î ºûÀÇ È¸ Çö»óÀÌ »ý°Ü Çػ󵵰¡ ¶³¾îÁü exposure Åõ»çÇüÀμâ¹ý maskÆÐÅÏÀÇ À̹ÌÁö¸¦ ¼ö cm ¶³¾îÁø prÀÌ µµÆ÷µÈ wafer À§¿¡ Åõ»ç½ÃÄÑ ÆÐÅÏÀ» Çü¼ºÇÏ´Â Àμâ¹ý
maskÀÇ ¼Õ»óÀÌ »ý±âÁö¾Ê´Â´Ù.
maskÀÇ ÀÛÀº¿µ¿ª¸¸ ³ëÃâ, Çػ󵵰¡ ÁÁ´Ù.
exposure aliner stepper scanner exposure device exposure aligner 1:1ÀÇ image ºñÀ²·Î wafer mask¸¦ ¸¸µë mask°¡ waferÀÇ Å©±â¿Í °°°í È®´ë³ª Ãà¼Ò ¾øÀ½ Çѹø¿¡ ³ë±¤ÇÔÀ¸·Î ÀÛ¾÷󸮷® ÁÁÀ½ ³ë±¤¿µ¿ªÀÌ ³Ð¾î ±ÕÀϵµ°¡ ³ª»Ý exposure stepper 4:1 ~ 10:1 Á¤µµ·Î Ãà¼Ò Åõ¿µ step & repeat ¹æ½Ä wafer stage ¸¸ ¿òÁ÷ÀÓ ·»Á full·Î »ç¿ëÇϱ⠶§¹®¿¡ ¼öÂ÷°¡ Å©´Ù Ãà¼Ò·»Á »ç¿ëÇÏ¿© reticle Ãà¼Ò field ¿µ¿ªÀ» ÇÑÁ¤ÇÔÀ¸·Î½á uniformity Çâ»ó maskÀÇ error factor°¡ 1/5·Î Ãà¼Ò ¹Ý¿µ exposure reticle-¹ÝµµÃ¼ÆÐÅÏ¿¡ ¾²ÀÌ´Â ¸¶½ºÅ·ÆÇ exposure scanner step & scan ¹æ½Ä wafer stage ¿Í reticleÀÌ °°ÀÌ ¿òÁ÷ÀÓ ·»ÁîÀÇ Á߽ɺθ¸ »ç¿ë, ¼öÂ÷¸¦ ÃÖ¼ÒÈ Ãà¼Ò·»Áî¿Í 4:1 reticle »ç¿ë (ÀÌÇÏ »ý·«)
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